Ham, MH Jeong, MC Lee, WY Myoung, JM Lee, JM Chang, JY Han, SH 2024-01-21T07:38:28Z 2024-01-21T07:38:28Z 2021-09-02 2004-02 0361-5235 https://pubs.kist.re.kr/handle/201004/137911 We present the magnetic and magnetotransport properties of epitaxial (Ga,Mn)N films with nominal Mn concentration (x = 0.1-0.73%) grown by plasma-enhanced molecular beam epitaxy (PEMBE). X-ray diffraction (XRD) reveals that (Ga,Mn)N has the single-phase wurtzite structure without secondary phases. The epitaxial (Ga,Mn)N films were found to exhibit n-type conductivity, ferromagnetic ordering with Curie temperature in the range 550-700 K, and in-plane magnetic anisotropy. The negative magnetoresistance (MR) was observed at temperatures below 50 K and was found to gradually increase with decreasing temperature. English SPRINGER MOLECULAR-BEAM-EPITAXY FERROMAGNETIC SEMICONDUCTOR ROOM-TEMPERATURE Magnetic and magnetotransport properties in the n-type (Ga,Mn)N thin films Article 10.1007/s11664-004-0279-3 1 JOURNAL OF ELECTRONIC MATERIALS, v.33, no.2, pp.114 - 117 JOURNAL OF ELECTRONIC MATERIALS 33 2 114 117 scie scopus 000189077800005 2-s2.0-1542318944 Engineering, Electrical & Electronic Materials Science, Multidisciplinary Physics, Applied Engineering Materials Science Physics Article MOLECULAR-BEAM-EPITAXY FERROMAGNETIC SEMICONDUCTOR ROOM-TEMPERATURE (Ga,Mn)N diluted magnetic semiconductor plasma-enhanced molecular beam epitaxy (PEMBE) ferromagnetism magnetotransport