Son, JH Kim, HB Whang, CN Sung, MC Jeong, K Im, S Chae, KH 2024-01-21T07:38:31Z 2024-01-21T07:38:31Z 2021-09-02 2004-02 0168-583X https://pubs.kist.re.kr/handle/201004/137912 The SiO2/Si (3 nm)/SiO2 layers were deposited by e-beam evaporation, and ion-beam-mixing was performed with 1.5 x 10(16) ions/cm(2) of 55 keV at room temperature. The sample deposited by e-beam evaporation needs the pre-annealing before ion-beam-mixing as well as the post-annealing after ion-beam-mixing to obtain the nanocrystal-related photoluminescence, compared with the study of the sample deposited by ion beam sputtering which was not required the pre-annealing before ion-beam-mixing to obtain visible red photoluminescence. The pre-annealing effect on the photoluminescence of Si ion-beam-mixed SiO2/Si (3 nm)/SiO2 layer will be discussed. (C) 2003 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV IMPLANTED SIO2 LUMINESCENCE TEMPERATURE Visible photoluminescence from Si ion-beam-mixed SiO2/Si/SiO2 layers deposited by e-beam evaporation Article 10.1016/j.nimb.2003.11.059 1 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, v.216, pp.346 - 349 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 216 346 349 scie scopus 000189222100058 2-s2.0-1042277323 Instruments & Instrumentation Nuclear Science & Technology Physics, Atomic, Molecular & Chemical Physics, Nuclear Instruments & Instrumentation Nuclear Science & Technology Physics Article; Proceedings Paper IMPLANTED SIO2 LUMINESCENCE TEMPERATURE ion-beam-mixing annealing photoluminescence Si nanocrystal