Lee, W Hwang, DK Jeong, MC Lee, M Oh, MS Choi, WK Myoung, JM 2024-01-21T07:39:20Z 2024-01-21T07:39:20Z 2021-09-02 2004-01-15 0169-4332 https://pubs.kist.re.kr/handle/201004/137925 ZnO thin films were grown on GaAs(0 0 1) substrate to study the feasibility of making As-doped textured ZnO films for possible optical device application using radio frequency (rf) magnetron sputtering. It was demonstrated that highly c-axis oriented ZnO crystal with uniformly doped As could be grown using this deposition technique. Crystallinity was shown to improve with higher processing temperature. Photoluminescence spectroscopy, supplemented by cathodo-lummescence imaging, showed that the ZnO films have good optical quality with strong near band emission peak at 3.3 eV and spatially homogeneous luminescence indicating possibility of producing As-doped ZnO films with good crystallinity and optical properties using the technique used herein. (C) 2003 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV THIN-FILMS OPTICAL-PROPERTIES ZINC-OXIDE ORIENTATION LAYER Fabrication and properties of As-doped ZnO films grown on GaAs(001) substrates by radio frequency (rf) magnetron sputtering Article 10.1016/S0169-4332(03)00947-4 1 APPLIED SURFACE SCIENCE, v.221, no.1-4, pp.32 - 37 APPLIED SURFACE SCIENCE 221 1-4 32 37 scie scopus 000187721700007 2-s2.0-0345171414 Chemistry, Physical Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Chemistry Materials Science Physics Article THIN-FILMS OPTICAL-PROPERTIES ZINC-OXIDE ORIENTATION LAYER ZnO GaAs As doping rf magnetron sputtering