Shon, Y Kwon, YH Park, YS Yuldashev, SU Lee, SJ Park, CS Chung, KJ Yoon, SJ Kim, HJ Lee, WC Fu, DJ Kang, TW Fan, XJ Park, YJ Oh, HT 2024-01-21T07:39:33Z 2024-01-21T07:39:33Z 2021-09-02 2004-01-15 0021-8979 https://pubs.kist.re.kr/handle/201004/137929 p-type GaN epilayers were prepared by metalorganic chemical vapor deposition and subsequently implanted with Fe+ ions. The properties of Fe+ implanted GaN epilayers were investigated by various measurements. The results of photoluminescence measurement show that optical transitions related to Fe appear at 2.5 eV and around 3.1 eV. It was confirmed that the photoluminescence peak at 2.5 eV is a donor-Fe acceptor transition and the photoluminescence peak around 3.1 eV is a conduction band-Fe acceptor transition. Apparent ferromagnetic hysteresis loops measured at 10 and 300 K were observed, and the temperature-dependent magnetization displayed a ferromagnetic behavior persisting above 350 K. (C) 2004 American Institute of Physics. English AMER INST PHYSICS MAGNETIC-PROPERTIES OPTICAL-PROPERTIES SEMICONDUCTORS FILMS MN Ferromagnetic behavior of p-type GaN epilayer implanted with Fe+ ions Article 10.1063/1.1630364 1 JOURNAL OF APPLIED PHYSICS, v.95, no.2, pp.761 - 763 JOURNAL OF APPLIED PHYSICS 95 2 761 763 scie scopus 000187659600058 2-s2.0-0742285720 Physics, Applied Physics Article MAGNETIC-PROPERTIES OPTICAL-PROPERTIES SEMICONDUCTORS FILMS MN diluted magnetic semiconductors Curie temperature GaN ion implantation photoluminescence