Jung, YS Lee, DW Jeon, DY 2024-01-21T07:39:39Z 2024-01-21T07:39:39Z 2021-09-01 2004-01-15 0169-4332 https://pubs.kist.re.kr/handle/201004/137931 Indium tin oxide (ITO) thin films were prepared by dc magnetron sputtering deposition on glass substrates under different process conditions. The surface morphology was monitored using atomic force microscopy (AFM) and scanning electron microscopy (SEM). The change in surface morphology of ITO films was discussed in terms of crystallographic orientation and grain size. The crystallographic orientations and the grain sizes of the samples significantly changed with different sputtering parameters. Moderate ranges of pressure and power density, less amounts of additional oxygen gas, and higher substrate temperatures, where adatoms are expected to have higher mobility, resulted in a rougher surface. Under those conditions, the domains had more mixed orientations, and the average sizes of grains were larger. (C) 2003 Elsevier B.V. All rights reserved. English ELSEVIER OXYGEN PARTIAL-PRESSURE ITO FILMS ELECTRICAL-PROPERTIES ROUGHNESS VOLTAGE ENERGY Influence of dc magnetron sputtering parameters on surface morphology of indium tin oxide thin films Article 10.1016/S0169-4332(03)00862-6 1 APPLIED SURFACE SCIENCE, v.221, no.1-4, pp.136 - 142 APPLIED SURFACE SCIENCE 221 1-4 136 142 scie scopus 000187721700021 Chemistry, Physical Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Chemistry Materials Science Physics Article OXYGEN PARTIAL-PRESSURE ITO FILMS ELECTRICAL-PROPERTIES ROUGHNESS VOLTAGE ENERGY indium tin oxide sputtering morphology atomic force microscopy