Lee, CY Song, JD Kim, JM Chang, KS Lee, YT Kim, TW 2024-01-21T07:40:09Z 2024-01-21T07:40:09Z 2021-09-01 2004-01-03 0025-5408 https://pubs.kist.re.kr/handle/201004/137940 Temperature-dependent photoluminescence (PL) measurements have been carried out to investigate the dependence of the optical properties on the GaAs spacer thickness for vertically stacked InAs/GaAs quantum dots (QDs). The PL spectra showed that the peak corresponding to the interband transitions form the ground electronic subband to the ground heavy-hole band (E-0-HH1) of the InAs QDs shifted to a higher energy side with increasing the GaAs spacer thickness and that the full width at maximum (FWHM) of the (E-0-HH1) peak rapidly decreased with increasing a spacer thickness. The position energy and the FWHM of the (E-0-HH1) peak for the InAs/GaAs QDs at several temperatures were observed. The present observations can help improve understanding of the dependence of the optical properties on the GaAs spacer thickness for vertically stacked InAs/GaAs QDs. (C) 2003 Elsevier Ltd. All rights reserved. English PERGAMON-ELSEVIER SCIENCE LTD HETEROSTRUCTURES Dependence of the optical properties on the GaAs spacer thickness for vertically stacked InAs/GaAs quantum dots Article 10.1016/j.materresbull.2003.07.013 1 MATERIALS RESEARCH BULLETIN, v.39, no.1, pp.135 - 139 MATERIALS RESEARCH BULLETIN 39 1 135 139 scie scopus 000188042700015 Materials Science, Multidisciplinary Materials Science Article HETEROSTRUCTURES nanostrucutres epitaxial growth optical properties