Song, SK Koh, SK Lee, DY Baik, HK 2024-01-21T07:40:36Z 2024-01-21T07:40:36Z 2022-01-25 2004-01 0021-4922 https://pubs.kist.re.kr/handle/201004/137948 The electrical conductance characteristics due to tunneling of Au films on glass substrates as a function of deposition rate and Ar+ ion current density have been investigated by in situ measurement. The onset thickness for conductance was 8.5-29 Angstrom lower than that obtained by other researchers due to the use of a nozzle beam in this study. The degree of agglomeration, I, attained its maximum value at a deposition rate R = 1.0 Angstrom/s. The degree of coalescence increased with increasing deposition rate. The onset thickness for conductance decreased to a nearly linear line with increasing ion beam irradiation. English JAPAN SOC APPLIED PHYSICS Initial growth characteristics of gold thin films by a nozzle beam and ion-assisted deposition Article 10.1143/JJAP.43.L15 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, v.43, no.1A-B, pp.L15 - L17 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 43 1A-B L15 L17 N scie scopus 000220092700005 2-s2.0-1842659034 Physics, Applied Physics Article IONIZED CLUSTER BEAM METAL-FILMS COALESCENCE CONDUCTION RESISTANCE ULTRATHIN MECHANISM Au films in situ measurement nozzle beam onset thickness