Kim, YM Yoon, M Park, IW Park, YJ Lyou, JH 2024-01-21T07:42:00Z 2024-01-21T07:42:00Z 2021-09-02 2004-01 0038-1098 https://pubs.kist.re.kr/handle/201004/137974 We report on the ferromagnetic characteristics of Znl-xMnxO films (x = 0.1-0.3) prepared by the sol-gel method on silicon substrates using transmission electron microscopy (TEM), energy dispersive spectroscopy (EDS), X-ray diffractometry (XRD) and superconducting quantum interference device (SQUID) magnetometry at various temperatures. Magnetic measurement show that the Curie temperature (T-C) and the coercive field (H-C) were similar to 39 K and similar to 2100 Oe for the film of x = 0.2, respectively. EDS and TEM measurements indicate that Mn content at the interface is significantly higher than that at the center of the Zn0.8Mn0.2O film showing the ratio, Zn:Mn:O congruent to 1:12:15. This experimental evidence suggests that ferromagnetic precipitates containing manganese oxide may be responsible for the observed ferromagnetic behavior of the film. (C) 2003 Elsevier Ltd. All rights reserved. English PERGAMON-ELSEVIER SCIENCE LTD ZNO FILMS DOPED ZNO SEMICONDUCTORS Synthesis and magnetic properties of Zn1-xMnxO films prepared by the sol-gel method Article 10.1016/j.ssc.2003.09.035 1 SOLID STATE COMMUNICATIONS, v.129, no.3, pp.175 - 178 SOLID STATE COMMUNICATIONS 129 3 175 178 scie scopus 000187742600007 2-s2.0-0344494494 Physics, Condensed Matter Physics Article ZNO FILMS DOPED ZNO SEMICONDUCTORS ZnO diluted magnetic semiconductor manganese oxide sol-gel energy dispersive spectroscopy