Shin, B Chen, W Goldman, RS Song, JD Kim, JM Lee, YT 2024-01-21T07:43:00Z 2024-01-21T07:43:00Z 2021-09-01 2004-01 1071-1023 https://pubs.kist.re.kr/handle/201004/137990 We have investigated the initiation and evolution of lateral phase separation in GaP/InP short-period superlattices (SPSs). Cross-sectional scanning tunneling microscopy reveals lateral contrast modulations within the SPS region, presumably due to alloy phase separation. The wavelength of the modulations appears to be constant throughout the entire SPS structure. Interestingly, the wavelength is dependent on the thickness of the constituent layers of the superlattice, and is likely to be affected by an observed significant concentration of group V vacancies. Together, these results suggest that phase separation is initiated by compositional nonuniformities from excess surface adatoms due to incomplete coverage of the constituent layers of the superlattice, and that the phase separation process is assisted by In-Ga interdiffusion via P vacancies. (C) 2004 American Vacuum Society. English A V S AMER INST PHYSICS LATERAL COMPOSITION MODULATION WURTZITE TYPE SEMICONDUCTORS MOLECULAR-BEAM EPITAXY LAYER ORDERING PROCESS VIRTUAL-ENTHALPIES ANION VACANCIES ZINCBLENDE RELAXATION SURFACES INP(110) Initiation and evolution of phase separation in GaP/InP short-period superlattices Article 10.1116/1.1642642 1 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.22, no.1, pp.216 - 219 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 22 1 216 219 scie scopus 000220573800043 Engineering, Electrical & Electronic Nanoscience & Nanotechnology Physics, Applied Engineering Science & Technology - Other Topics Physics Article LATERAL COMPOSITION MODULATION WURTZITE TYPE SEMICONDUCTORS MOLECULAR-BEAM EPITAXY LAYER ORDERING PROCESS VIRTUAL-ENTHALPIES ANION VACANCIES ZINCBLENDE RELAXATION SURFACES INP(110)