Ham, MH Jeong, MC Lee, WY Myoung, JM Chang, JY Han, SH 2024-01-21T08:03:10Z 2024-01-21T08:03:10Z 2021-09-03 2003-11-15 0021-4922 https://pubs.kist.re.kr/handle/201004/138083 We present the, ferromagnetism and magnetotransport properties in the (Ga,Mn)N epitaxial films with different Mn concentrations grown by plasma-enhanced molecular beam epitaxy. The (Ga,Mn)N epitaxial films were obviously found to exhibit ferromagnetic ordering with Curie temperature exceeding room temperature. The anomalous Hall effect is observed to persist up to 250 K and found to gradually increase-with decreasing temperature. The negative magnetoresistance was observed below 50 K. The ferromagnetism in the n-type (Ga,Mn)N is due to the Rudennan-Kittel-Kasuya-Yosida (RKKY) interaction between the localized Mn moments mediated by the electron gas. English INST PURE APPLIED PHYSICS DILUTED MAGNETIC SEMICONDUCTORS ROOM-TEMPERATURE FILMS Magnetotransport in (Ga,Mn)N ferromagnetic semiconductors grown by plasma-enhanced molecular beam epitaxy Article 10.1143/JJAP.42.L1372 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.42, no.11B, pp.L1372 - L1374 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 42 11B L1372 L1374 scie scopus 000187509400009 2-s2.0-1642447055 Physics, Applied Physics Article DILUTED MAGNETIC SEMICONDUCTORS ROOM-TEMPERATURE FILMS (Ga,Mn)N PEMBE ferromagnetism anomalous Hall effect magnetotransport