Kim, KS Lee, CE Lim, SH 2024-01-21T08:03:29Z 2024-01-21T08:03:29Z 2021-09-03 2003-11-03 0003-6951 https://pubs.kist.re.kr/handle/201004/138089 Magnetization reversal behavior is examined under various nonuniform fields, the conditions of which are relevant to magnetic random access memory applications. During the magnetization reversal, the end domains play a key role at a uniform field, but they play a negligible role at a nonuniform field. Instead, a ripple pattern is initially formed in the interior and it progresses to form a vortex, resulting in a reversed domain. The switching field is found to be greater in the case of a nonuniform field, but, under a bias field, it is reduced greatly to a level similar to that for a uniform field. This result may indicate a wide window for the bit selectivity under a nonuniform field in magnetic random access memory applications. (C) 2003 American Institute of Physics. English AMER INST PHYSICS ELEMENTS Magnetization reversal under nonuniform magnetic fields at conditions relevant to magnetic random access memory applications Article 10.1063/1.1625105 1 APPLIED PHYSICS LETTERS, v.83, no.18, pp.3761 - 3763 APPLIED PHYSICS LETTERS 83 18 3761 3763 scie scopus 000186256300039 2-s2.0-0344066248 Physics, Applied Physics Article ELEMENTS magnetization reversal nonuniform magnetic field computer simulation magnetic random access memory