손창식 최인훈 박용주 2024-01-21T08:05:05Z 2024-01-21T08:05:05Z 2021-09-06 2003-11 1225-0562 https://pubs.kist.re.kr/handle/201004/138119 One-dimensional array of InAs quantum dots (QDs) have been grown on V-grooved GaAs substrates by low-pressure metalorganic chemical vapor deposition. Atomic force microscope images show that InAs QDs are aligned in one-dimensional rows along the [011] oriented bottom of V-grooves and no QDs are formed on the sidewalls and the surface of mesa top. Capability to grow one-dimensional InAs QDs array would feasible for the single electron tunneling devices and other novel quantum-confined devices. 한국재료학회 V 홈 바닥에 형성된 일차원 InAs 양자점 One-dimensional Array of InAs Quantum Dots on Grown V-grooves Article 2 한국재료학회지, v.13, no.11, pp.708 - 710 한국재료학회지 13 11 708 710 kci ART000914287 quantum dots InAs MOCVD AFM SEM