Kim, IS Kim, YT Kim, SI Choi, IH 2024-01-21T08:05:14Z 2024-01-21T08:05:14Z 2021-09-03 2003-11 0374-4884 https://pubs.kist.re.kr/handle/201004/138122 We have investigated the effects of hydrogen annealing at the Curie temperature (435 degreesC) on Pt/SrBi2Nb2O9(SBN)/Si (MFS) and Pt/SBN/Pt (MFM) structures. Although the Curie temperature is too low to cause any phase transformation in the SBN film, the microstructure and the electrical characteristics of the MFS and the MFM structures are obviously damaged by the effects of hydrogen annealing. However, the interface trap density is relatively decreased from 3.3 x 10(11) to 1.58 X 10(11)/cm(2) eV after hydrogen annealing at 435 degreesC. After a recovery annealing process at a higher temperature in an oxygen ambient, the microstructure and the electrical properties of the MFM and the MFS structures are completely recovered. English KOREAN PHYSICAL SOC CAPACITORS Effects of hydrogen annealing on the electrical properties of SrBi2Nb2O9 thin films Article 10.3938/jkps.43.850 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.43, no.5, pp.850 - 853 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 43 5 850 853 scie scopus kci 000186615200008 2-s2.0-0344120167 Physics, Multidisciplinary Physics Article CAPACITORS ferroelectric thin film SiBi2Nb2O9 hydrogen annealing Curie temperature interface trap