Lee, JI Han, IK Koguchi, N Kuroda, T Minami, F 2024-01-21T08:06:58Z 2024-01-21T08:06:58Z 2022-01-25 2003-10 0374-4884 https://pubs.kist.re.kr/handle/201004/138154 We present the carrier dynamics of InGaAs quantum dots with and without cladding layers grown by heterogeneous droplet epitaxy. Time-resolved photoluminescence spectroscopy showed double exponential decays for the first excited states, including an initial fast decay, of highly excited quantum dots with cladding layers in contrast to the single exponential decay in quantum dots without cladding layers. Moreover, the GaAs barriers had slow rise times of about 220 ps, which corresponded to the initial fast decay time of the first excited states of quantum dots. These results provide evidence of Auger processes between the carriers in the GaAs barriers and those in the first-excited states of quantum dots. English KOREAN PHYSICAL SOC Auger processes in InGaAs QDs grown by using the droplet method Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.43, no.4, pp.553 - 556 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 43 4 553 556 N scie scopus kci 000185973800019 2-s2.0-0242381933 Physics, Multidisciplinary Physics Article INAS/GAAS QUANTUM DOTS ENERGY RELAXATION CARRIER DYNAMICS SCATTERING CAPTURE EPITAXY quantum dots Auger processes carrier relaxation time-resolved photoluminescence