Sim, HS Kim, SI Jeon, H Kim, YT 2024-01-21T08:09:26Z 2024-01-21T08:09:26Z 2021-09-03 2003-10 0021-4922 https://pubs.kist.re.kr/handle/201004/138200 We have deposited W-N thin films with a pulse plasma enhanced atomic layer deposition (PPALD) method by using WF6 and NH3. It has been very difficult to deposit W-N film on the SiO2 surface with ALD method by using WF6 and NH3 because WF6 does not adsorb on the SiO2 surface and not react with NH3 at 200-400degreesC. However, in this work introducing NH3 pulse plasma, which is synchronized with ALD cycles, we can deposit the W-N film on the SiO2 surface with the rate of similar to1.3 monolayer/cycle at 350degreesC. N concentration is also uniformly distributed in the W-N film. This is due to the surface nitridation to enhance the adsorption of WF6 at the SiO2 surface. As a diffusion barrier for the Cu interconnect, electrical measurement reveals that 22 nm thick W-N successfully prevents Cu diffusion after the annealing at 600degreesC for 30 min. English INST PURE APPLIED PHYSICS FILMS SILICON A new pulse plasma enhanced atomic layer deposition of tungsten nitride diffusion barrier for copper interconnect Article 10.1143/JJAP.42.6359 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.42, no.10, pp.6359 - 6362 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 42 10 6359 6362 scie scopus 000186948400022 2-s2.0-0346959659 Physics, Applied Physics Article FILMS SILICON atomic layer deposition diffusion barrier tungsten nitride remote plasma