PARK, JONG KEUK Lee, Wook Seong Baik, Young Joon Chae, KW 2024-01-21T08:09:32Z 2024-01-21T08:09:32Z 2021-09-03 2003-10 0925-9635 https://pubs.kist.re.kr/handle/201004/138202 The effect of negative direct current (DC) bias on the deposition of diamond on WC-Co insert was investigated. Diamond was deposited by microwave plasma assisted chemical vapor deposition (MW PACVD) on the SPGN type of WC-Co insert at 30 Torr with H2-2%CH4 mixed gas. During the deposition process, DC bias was applied to the insert with the range between 0 and - 120 V. The grain size of diamond film deposited on WC-Co insert was observed to decrease with the negative bias voltage. Furthermore, its tendency was more pronounced near the edge than at the center of the insert. The ion impact on the growth surface during deposition was considered to induce surface defects, which resulted in the renucleation of diamond crystals and grain size refinement. (C) 2003 Elsevier Science B.V. All rights reserved. English ELSEVIER SCIENCE SA The pronounced grain size refinement at the edge position of the diamond-coated WC-Co inserts under microwave plasma with negative bias Article 10.1016/S0925-9635(03)00266-8 1 DIAMOND AND RELATED MATERIALS, v.12, no.10-11, pp.1657 - 1662 DIAMOND AND RELATED MATERIALS 12 10-11 1657 1662 N scie scopus 000187427300007 2-s2.0-0348010223 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article; Proceedings Paper ION-BOMBARDMENT FIELD-EMISSION THIN-FILMS GROWTH COATINGS DEPOSITION NUCLEATION MORPHOLOGY ADHESION MW PACVD diamond-coated tools DC bias grain size refinement edge