Cho, J Yoon, KH Oh, MS Choi, WK 2024-01-21T08:09:41Z 2024-01-21T08:09:41Z 2021-09-03 2003-10 0013-4651 https://pubs.kist.re.kr/handle/201004/138205 Al-doped zinc oxide (AZO) thin films have been grown on Al2O3 (0001) substrate by radio-frequency (rf) magnetron sputtering at 550 degreesC. The AZO films have been annealed by a rapid thermal process in H-2 exposure with a temperature range of 600-1000 degreesC. Effects of hydrogen on the AZO films have been investigated using photoluminescence (PL), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM). The as-grown AZO film shows only broad deep defect-level PL. After annealing at 600 degreesC, deep defect-level emission is quenched and near-band-edge (NBE) emission is observed at around 382 nm (3.2 eV), which can be explained by the H-2 passivation effect. At elevated temperature, two interesting peaks corresponding to violet (406 nm, 3.05 eV) and blue (436 nm, 2.84 eV) emissions have been observed for the first time in annealed AZO thin films. Incorporation of hydrogen and formation of oxygen deficient in annealed AZO films have been studied using XPS. Surface morphology and microstructure of AZO films have been carried out by SEM. (C) 2003 The Electrochemical Society. English ELECTROCHEMICAL SOC INC PULSED-LASER DEPOSITION THIN-FILMS OXIDE FILMS ZNO FILMS SAPPHIRE PLASMA ZINC SPECTROSCOPY HYDROGEN RF Effects of H-2 annealing treatment on photoluminescence and structure of ZnO : Al/Al2O3 grown by radio-frequency magnetron sputtering Article 10.1149/1.1602458 1 JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.150, no.10, pp.H225 - H228 JOURNAL OF THE ELECTROCHEMICAL SOCIETY 150 10 H225 H228 scie scopus 000185639800062 2-s2.0-0142053047 Electrochemistry Materials Science, Coatings & Films Electrochemistry Materials Science Article PULSED-LASER DEPOSITION THIN-FILMS OXIDE FILMS ZNO FILMS SAPPHIRE PLASMA ZINC SPECTROSCOPY HYDROGEN RF H ₂ annealing Al-dopep ZnO rf magnetron sputtering blue emission phospher