Huh, KS Jeong, MC Ham, MH Myoung, JM Lee, WY Lee, JM Han, SH 2024-01-21T08:10:07Z 2024-01-21T08:10:07Z 2021-09-03 2003-10 0038-1098 https://pubs.kist.re.kr/handle/201004/138213 Effects of Mn flux on the magnetic properties of (Ga,Mn)N films grown on sapphire substrate by plasma-enhanced molecular beam epitaxy (PEMBE) discussed. The (Ga,Mn)N thin films were found to exhibit ferromagnetic ordering at room temperature without any secondary phases by X-ray diffraction and alternating gradient magnetometer. It is found that, although the surface morphology and the electrical properties are degraded with increasing Mn concentration, the magnetic properties of the films improve. (C) 2003 Elsevier Ltd. All rights reserved. English PERGAMON-ELSEVIER SCIENCE LTD DILUTED MAGNETIC SEMICONDUCTOR ROOM-TEMPERATURE GAN-MN Effects of Mn flux on ferromagnetic properties of (Ga,Mn)N films grown by PEMBE Article 10.1016/j.ssc.2003.08.002 1 SOLID STATE COMMUNICATIONS, v.128, no.4, pp.119 - 123 SOLID STATE COMMUNICATIONS 128 4 119 123 scie scopus 000185567100001 2-s2.0-0141607719 Physics, Condensed Matter Physics Article DILUTED MAGNETIC SEMICONDUCTOR ROOM-TEMPERATURE GAN-MN (Ga,Mn)N diluted magnetic semiconductor (DMS) PEMBE ferromagnetism