Park, HS Yi, JC Byun, YT 2024-01-21T08:13:23Z 2024-01-21T08:13:23Z 2022-01-10 2003-09 0951-3248 https://pubs.kist.re.kr/handle/201004/138273 Single mode depleted p-n InGaAsP/InP ridge waveguide phase modulators have been fabricated and investigated at 1.55mum. The phase modulation efficiency of the device was characterized by using the Fabry-Perot resonance method with a tunable laser. The measured phase modulation efficiency for a 2 mm long device was determined as high as 34 deg/V(.)mm for TE mode. This value corresponds to the highest experimental electrooptic modulation efficiency reported so far for InGaAsP/InP p-n phase modulators at the said wavelength region. English IOP PUBLISHING LTD Investigation of the modulation efficiency of depleted InGaAsP/InP ridge waveguide phase modulators at 1.55 mu m Article 1 COMPOUND SEMICONDUCTORS 2002, v.174, pp.435 - 438 COMPOUND SEMICONDUCTORS 2002 174 435 438 scie scopus 000222970500097 2-s2.0-10444285325 Engineering, Electrical & Electronic Physics, Multidisciplinary Physics, Condensed Matter Engineering Physics Article; Proceedings Paper Phase modulator InGaAsP/InP Modulation efficiency ridge waveguide