Lee, JM Lee, KI Chang, JY Ham, MH Huh, KS Myoung, JM Hwang, WJ Shin, MW Han, SH Kim, HJ Lee, WY 2024-01-21T08:13:49Z 2024-01-21T08:13:49Z 2021-09-03 2003-09 0167-9317 https://pubs.kist.re.kr/handle/201004/138281 The magnetic and magnetotransport properties of epitaxial (Ga1-xMnx)N films with low Mn concentration (x=0.06-0.5%) grown by plasma-enhanced molecular beam epitaxy have been investigated. Ferromagnetic ordering for the GaMnN is clearly seen in the temperature range 4-300 K. The M-T curves were fitted with theoretical equations based on the mean field theory in order to estimate Curie temperature (T-c), providing T-c approximate to 550 K and T-c approximate to 700 K, respectively, for the (Ga,Mn)N films with x=0.16% and x=0.50%. Temperature dependence of sheet resistance is found to show negative magneto-resistance in the temperature range 4-300 K, indicative of ferromagnetic semiconducting (Ga,Mn)N films. (C) 2003 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV MOLECULAR-BEAM-EPITAXY DILUTED MAGNETIC SEMICONDUCTORS ROOM-TEMPERATURE Ferromagnetic ordering of n-type (Ga,Mn)N epitaxial films Article 10.1016/S0167-9317(03)00311-3 1 MICROELECTRONIC ENGINEERING, v.69, no.2-4, pp.283 - 287 MICROELECTRONIC ENGINEERING 69 2-4 283 287 scie scopus 000185725300026 2-s2.0-0141858716 Engineering, Electrical & Electronic Nanoscience & Nanotechnology Optics Physics, Applied Engineering Science & Technology - Other Topics Optics Physics Article; Proceedings Paper MOLECULAR-BEAM-EPITAXY DILUTED MAGNETIC SEMICONDUCTORS ROOM-TEMPERATURE diluted magnetic semiconductor carrier-mediated ferromagnetism wide bandgap ferromagnetic semiconductor negative magnetoresistance