Lee, KI Chae, KH Lee, JH Ha, JG Rhie, K Lee, WY Shin, KH 2024-01-21T08:14:21Z 2024-01-21T08:14:21Z 2021-09-03 2003-09 0167-9317 https://pubs.kist.re.kr/handle/201004/138291 We report on a systematic investigation of rapid thermal anneal (RTA) effects on the properties of FeMn exchange-biased magnetic tunnel junctions (MTJs). The tunneling magnetoresistance (TMR) in an as-grown MTJ is found to be similar to27%, whereas the TMR in MTJs annealed by RTA increases with annealing temperature up to 300 degreesC, reaching similar to46%. A significant change in the effective barrier thickness (t(eff)) and height (Phi(eff)) occurs within 10 s during RTA. Transmission electron microscopy and X-ray reflectivity studies demonstrate that the interface of the alumina tunnel barrier for the MTJ annealed by RTA became sharper and clearer, giving rise to the enhanced TMR. (C) 2003 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV TEMPERATURE-DEPENDENCE STABILITY Optimization of tunneling magnetotransport and thermal properties in magnetic tunnel junctions by rapid thermal anneal Article 10.1016/S0167-9317(03)00313-7 1 MICROELECTRONIC ENGINEERING, v.69, no.2-4, pp.305 - 308 MICROELECTRONIC ENGINEERING 69 2-4 305 308 scie scopus 000185725300028 2-s2.0-0141680900 Engineering, Electrical & Electronic Nanoscience & Nanotechnology Optics Physics, Applied Engineering Science & Technology - Other Topics Optics Physics Article; Proceedings Paper TEMPERATURE-DEPENDENCE STABILITY magnetic tunnel junctions (MTJs) magnetic random access memory (MRAM) rapid thermal anneal (RTA)