Choi, HJ Johnson, JC He, RR Lee, SK Kim, F Pauzauskie, P Goldberger, J Saykally, RJ Yang, PD 2024-01-21T08:15:19Z 2024-01-21T08:15:19Z 2021-09-01 2003-08-28 1520-6106 https://pubs.kist.re.kr/handle/201004/138309 Quantum wire lasers are generally fabricated through complex overgrowth processes with molecular beam epitaxy. The material systems of such overgrown quantum wires have been limited to Al-Ga-As-P, which leads to emission largely in the visible region. We describe a simple, one-step chemical vapor deposition process for making quantum wire lasers based on the Al-Ga-N system. A novel quantum-wire-in-optical-fiber (Qwof) nanostructure was obtained as a result of spontaneous Al-Ga-N phase separation at the nanometer scale in one dimension. The simultaneous excitonic and photonic confinement within these coaxial Qwof nanostructures leads to the first GaN-based quantum wire UV lasers with a relatively low threshold. English AMER CHEMICAL SOC STIMULATED-EMISSION PHASE-SEPARATION FILMS Self-organized GaN quantum wire UV lasers Article 10.1021/jp034734k 1 JOURNAL OF PHYSICAL CHEMISTRY B, v.107, no.34, pp.8721 - 8725 JOURNAL OF PHYSICAL CHEMISTRY B 107 34 8721 8725 scie scopus 000184968000002 Chemistry, Physical Chemistry Letter STIMULATED-EMISSION PHASE-SEPARATION FILMS GaN