Heo, DC Song, JD Choi, WJ Lee, JI Jeong, JC Han, IK 2024-01-21T08:33:56Z 2024-01-21T08:33:56Z 2021-09-03 2003-08 0021-4922 https://pubs.kist.re.kr/handle/201004/138374 Superluminescent diodes (SLDs) using an In0.5Ga0.5As quantum dot (QD) were fabricated. The In0.5Ga0.5As QDs were formed by a five-period superlattice of InAs (1 monolayer) and GaAs (1 monolayer). The QDs were three-stacked with the 40-nm-thick GaAs barrier layer and the total dot density was 5 x 10(10) cm(-2). The output power and spectral width of the SLD using these three-stacked QDs are 0.9 W and 80 nm, covering the range from 980 to 1060 nm, respectively. English INST PURE APPLIED PHYSICS LASERS Characteristics of superluminescent diodes utilizing In0.5Ga0.5As quantum dots Article 10.1143/JJAP.42.5133 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.42, no.8, pp.5133 - 5134 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 42 8 5133 5134 scie scopus 000185422900050 2-s2.0-0142075835 Physics, Applied Physics Article LASERS superluminescent diodes quantum dot short-period superlattice light emitting diodes