Lee, SH Yoon, KH Cheong, DS Lee, JK 2024-01-21T08:35:40Z 2024-01-21T08:35:40Z 2021-09-03 2003-07-01 0040-6090 https://pubs.kist.re.kr/handle/201004/138405 A systematic study of the stress and structural properties of AlN was done as a function of the deposition parameters such as sputtering pressure, target to substrate distance, and nitrogen concentration. As the nitrogen concentration (C-N2) decreased, the total pressure (P) and target to substrate distance (d) increased, the residual stress was changed from compressive to tensile stress. The correlation between stress and sputtering conditions was deduced as Pd/C-N2 dependency from experimental results. The microstructure of AlN films was also varied by the stress with a little change in crystal orientation. It was found that the compressive stress of AlN films originated from the excess nitrogen content and small-entrapped argon gas by the Rutherford backscattering spectroscopy analysis. (C) 2003 Elsevier Science B.V. All rights reserved. English ELSEVIER SCIENCE SA NITRIDE THIN-FILMS ZINC-OXIDE FILMS EPITAXIAL-GROWTH PARAMETERS SAPPHIRE PLASMA Relationship between residual stress and structural properties of AlN films deposited by r.f. reactive sputtering Article 10.1016/S0040-6090(03)00353-5 1 THIN SOLID FILMS, v.435, no.1-2, pp.193 - 198 THIN SOLID FILMS 435 1-2 193 198 scie scopus 000183681100037 2-s2.0-0038009060 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article; Proceedings Paper NITRIDE THIN-FILMS ZINC-OXIDE FILMS EPITAXIAL-GROWTH PARAMETERS SAPPHIRE PLASMA AlN sputtering stress nitrogen concentration microstructure