Heo, DC Han, IK Song, JD Choi, WJ Lee, JI Lee, JY Lee, JI Jeong, JC 2024-01-21T08:36:42Z 2024-01-21T08:36:42Z 2021-09-03 2003-07 0374-4884 https://pubs.kist.re.kr/handle/201004/138423 We report that the characteristics and the device applications of InGaAs quantum dots (QD's) grown by using the atomic layer epitaxy (ALE) technique. The measured average diameter and height of the QD's are about 45 nm and 7 nm, respectively. The typical density of QD's is 1.4 x 10(10)/cm(2) for a single layer. Optical sources, like laser diodes (LD's) and superluminescent diodes (SLD's), are fabricated on epi-structures with an active medium consisting of InGaAs QD's. In the case of LD's, the lasing wavelength is about 1.02 mum, which reflects lasing at high-energy states. The internal quantum efficiency and the internal loss is about 66 % and 45 cm(-1), respectively. In the case of SLD's, the output power is about 0.9 W, and the spectral bandwidth is 93 nm. Procedures to further improve device performances are also discussed. English KOREAN PHYSICAL SOC HIGH-POWER LASERS PERFORMANCE OPERATION Fabrication of optical sources using InGaAs quantum dots grown by atomic layer epitaxy Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.43, no.1, pp.154 - 159 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 43 1 154 159 scie scopus kci ART000990806 000184197200026 2-s2.0-0041568475 Physics, Multidisciplinary Physics Article HIGH-POWER LASERS PERFORMANCE OPERATION quantum dots laser diodes superluminescent diodes atomic layer epitaxy