Heo, DC Song, JD Han, IK Lee, JI Jeong, JC Kim, JM Lee, YT 2024-01-21T08:37:49Z 2024-01-21T08:37:49Z 2021-09-03 2003-07 0374-4884 https://pubs.kist.re.kr/handle/201004/138444 AlGaInAs/InGaAs multiple-quantum-well (MQW) 1.52-mum laser diodes are fabricated. The Al-GaInAs barrier is grown by using a digital alloy molecular beam epitaxy technique and is lattice-matched to InP. An internal loss of 13 cm(-1), an internal quantum efficiency of 41%, and a threshold current density of 0.88 kA/cm(2) are obtained from broad-area lasers. The characteristic temperature is constant at 70 K up to 50 degreesC and then decreases to 60 K in the range of 50 - 90 degreesC. A single-uncoated-facet CW output power as high as 0.5 W is demonstrated, which is the first room-temperature operation of the digital alloy 1.5-mum AlGaInAs material system. English KOREAN PHYSICAL SOC HIGH-TEMPERATURE BARRIERS CW 0.5-W 1.52-mu m digital alloy AlGaInAs-InP multiple-quantum-well lasers Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.43, no.1, pp.51 - 54 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 43 1 51 54 scie scopus kci ART000881993 000184197200010 2-s2.0-0043071481 Physics, Multidisciplinary Physics Article HIGH-TEMPERATURE BARRIERS digital alloy AlGalnAs MQWs