Park, HS Yi, JC Byun, YT Lee, S Kim, SH Takenaka, M Nakano, Y 2024-01-21T08:37:53Z 2024-01-21T08:37:53Z 2021-09-03 2003-07 0021-4922 https://pubs.kist.re.kr/handle/201004/138445 Single-mode P-p-n-N InGaAsP/InP ridge waveguide phase modulators have been fabricated and investigated at 1.55 mum. The ridge waveguide structure has been designed using a finite element method, grown by metal-organic-chemical-vapor-deposition (MOCVD), and fabricated by chemical wet etching. Their phase modulation characteristics were measured by using the Fabry-Perot resonance method with a tunable laser. The measured phase modulation efficiency for a 2-mm-long device was determined to be as high as 34 deg/V.mm for the TE mode. This value corresponds to the highest experimental electrooptic modulation efficiency reported thus far for InGaAsP/InP DH-type phase modulators at the said wavelength region. English JAPAN SOC APPLIED PHYSICS BANDWIDTH Investigation of the modulation efficiency of InGaAsP/InP ridge waveguide phase modulators at 1.55 mu m Article 10.1143/JJAP.42.4378 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.42, no.7A, pp.4378 - 4382 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 42 7A 4378 4382 scie scopus 000184662000045 Physics, Applied Physics Article BANDWIDTH electrooptic modulator InGaAsP/InP ridge waveguide phase modulation efficiency Fabry-Perot resonance ridge waveguide