Jun, JH Choi, DJ Kim, KH Oh, KY Hwang, CJ 2024-01-21T08:39:29Z 2024-01-21T08:39:29Z 2022-01-25 2003-06 0021-4922 https://pubs.kist.re.kr/handle/201004/138472 The electrical properties of lanthanum oxide was grown by using metal organic chemical vapor deposition (MOCVD) were investigated from the change of structural properties which occurred during the post-annealing process. The as-grown film had a dielectric constant of 18.8, and capacitance equivalent oxide thickness of 1.7 nm. The leakage current density of the film was measured as 2.4 x 10(-4) A/cm(2) at -1 MV/cm. When the film was annealed at 900degreesC, the dielectric constant decreased with the increase of the interfacial layer. [DOI: 10.1143/JJAP.42.3519]. English INST PURE APPLIED PHYSICS Effect of structural properties on electrical properties of lanthanum oxide thin film as a gate dielectric Article 10.1143/JJAP.42.3519 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.42, no.6A, pp.3519 - 3522 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 42 6A 3519 3522 N scie scopus 000183927800055 2-s2.0-0042882672 Physics, Applied Physics Article STABILITY SI(001) DEPOSITION SILICON LAYERS electrical and structural properties lanthanum oxide MOCVD dielectric constant leakage current density post-annealing interfacial layer