Kim, J Park, YJ Byun, D Jhin, J Kang, M Koh, EK Moon, Y Min, SK 2024-01-21T08:42:44Z 2024-01-21T08:42:44Z 2021-09-03 2003-06 0021-4922 https://pubs.kist.re.kr/handle/201004/138533 The structural and optical properties of GaN epilayers grown on intentionally strained sapphire (0001) substrates by metalorganic chemical vapor deposition (MOCVD) were investigated. Intentionally tensile strained sapphire substrates were prepared by the implantation of 2.4 MeV energy Cl+ and As+-ions with a 10(15) cm(-2) dose where the projection ranges (R-p) were 1.16 mum and 0.95 mum, respectively. It was found from Raman spectroscopy that the compressive stress normally existed in the GaN epilayer/sapphire was decreased by the use of a Cl+-ion-implanted sapphire substrate. The intentionally tensile strained sapphire surface can result in a superior crystalline GaN epilayer on top of it. However, excessively roughened and modified surface by As+-ions degraded the GaN epilayer. Not only the ionic radius but also the chemical species of implanted ions in sapphire affected the crystal quality of GaN epilayers. Therefore, we concluded that the properly tensile-strained sapphire (0001) substrate could improve the properties of GaN epilayers grown by MOCVD. English JAPAN SOC APPLIED PHYSICS DEPOSITION SURFACE GROWTH DIODES Influence of intentionally strained sapphire substrate on GaN epilayers Article 10.1143/JJAP.42.3991 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.42, no.6B, pp.3991 - 3994 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 42 6B 3991 3994 scie scopus 000184373400053 2-s2.0-0041861333 Physics, Applied Physics Article; Proceedings Paper DEPOSITION SURFACE GROWTH DIODES GaN ion implantation tensile-strained sapphire MOCVD