Kim, SI Son, CS Kim, YH Kim, YT 2024-01-21T08:42:47Z 2024-01-21T08:42:47Z 2021-09-03 2003-06 0021-4922 https://pubs.kist.re.kr/handle/201004/138534 Noble quantum wire structures were grown by low-pressure metalorganic chemical vapor deposition (MOCVD). Triangular InGaAs/GaAs quantum wire structures with sharp tips and smooth sidewalls were grown on SiO2 masked GaAs substrates. To characterize and analyze the selectively grown structures, scanning electron microscopy and temperature-dependent photoluminescence were used. Even though the opening width was different, it was possible to obtain a similar triangular structure. If we use this quantum confined structure of different size, it would be possible to grow quantum wire structures with various thicknesses and fabricate uniquely integrated optical devices which include light-emitting sources of multiple wavelength. The emission peak from quantum wires was observed at 975 nm. With increasing temperature, the emission intensity from side wall quantum wells decreased abruptly. However, the intensity from quantum wires decreased slowly compared to that from side wall quantum wells and it became even stronger above 50 K. The possible carrier capture processes in the quantum wire structures were also discussed. [DOI: 10.1143/JJAP.42.3603]. English JAPAN SOC APPLIED PHYSICS Growth and characterization of triangular InGaAs/GaAs quantum wire structures grown by low-pressure metalorganic chemical vapor deposition Article 10.1143/JJAP.42.3603 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.42, no.6A, pp.3603 - 3605 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 42 6A 3603 3605 scie scopus 000183927800074 2-s2.0-0042381651 Physics, Applied Physics Article MOCVD selective epitaxy quantum wire InGaAs PL