Jang, YT Choi, CH Ju, BK Ahn, JH Lee, YH 2024-01-21T08:43:13Z 2024-01-21T08:43:13Z 2021-09-03 2003-06 0921-4526 https://pubs.kist.re.kr/handle/201004/138542 We successfully fabricated microgated nanotubes emitter using nanotubes;directly grown on the substrate by the thermal CVD method. In order to reduce the leakage current due to flowing current along nanotubes grown on the sidewalls of the gate hole, we suggested the very simple processing step for fabricating sidewall protector using a parting layer that is generally used in metal tip process. The field emission properties imply a turn-on gate voltage of 52 V and an emission current of 1.7 muA at 100 V. The sidewall protector has an effect on reducing gate current by suppressing the growth of nanotubes on sidewall. The emission current fluctuation was +/-10% over 2600s. (C) 2003 Elsevier Science B.V. All rights reserved. English ELSEVIER SCIENCE BV FIELD-EMISSION CARBON NANOTUBES Simple approach to fabricate microgated nanotubes emitter with a sidewall protector Article 10.1016/S0921-4526(02)02668-6 1 PHYSICA B-CONDENSED MATTER, v.334, no.1-2, pp.9 - 12 PHYSICA B-CONDENSED MATTER 334 1-2 9 12 scie scopus 000183224300002 2-s2.0-0038475862 Physics, Condensed Matter Physics Article FIELD-EMISSION CARBON NANOTUBES carbon nanotube selective growth field emission triode emitter