Choi, CS Kang, HS Choi, WY Kim, HJ Choi, WJ Kim, DH Jang, KC Seo, KS 2024-01-21T08:43:19Z 2024-01-21T08:43:19Z 2021-09-03 2003-06 1041-1135 https://pubs.kist.re.kr/handle/201004/138544 The high optical responsivity of the InAlAs-InGaAs metamorphic high-electron mobility transistor on GaAs substrate with composite channels is reported. Experimental results verify that the photovoltaic effect causing the effective decrease of threshold voltage is responsible for the photoresponse to a 1.55-mum optical illumination. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC INALAS/INGAAS HEMTS High optical responsivity of InAlAs-InGaAs metamorphic high-electron mobility transistor on GaAs substrate with composite channels Article 10.1109/LPT.2003.811339 1 IEEE PHOTONICS TECHNOLOGY LETTERS, v.15, no.6, pp.846 - 848 IEEE PHOTONICS TECHNOLOGY LETTERS 15 6 846 848 scie scopus 000183112400020 2-s2.0-0037863730 Engineering, Electrical & Electronic Optics Physics, Applied Engineering Optics Physics Article INALAS/INGAAS HEMTS metamorphic high-electron mobility transistor (HEMT) photodetector phototransistor responsivity