Heo, DC Song, JD Choi, WJ Lee, JI Jung, JC Han, IK 2024-01-21T08:44:07Z 2024-01-21T08:44:07Z 2021-09-03 2003-05-29 0013-5194 https://pubs.kist.re.kr/handle/201004/138558 The characteristics of superluminescent diodes (SLDs) using InGaAs quantum dot is presented. In0.5Ga0.5As quantum dot is formed by a short period superlattice of InAs and GaAs. The output power and the spectral width of the SLD are 0.9 W and 80 run, respectively, covering the range 980-1060 nm. English IEE-INST ELEC ENG High power broadband InGaAs/GaAs quantum dot superluminescent diodes Article 10.1049/el:20030519 1 ELECTRONICS LETTERS, v.39, no.11, pp.863 - 865 ELECTRONICS LETTERS 39 11 863 865 scie scopus 000183531300028 2-s2.0-0038001642 Engineering, Electrical & Electronic Engineering Article superluminescent diodes quantum dots High power spectral bandwidth