Lee, YH Kim, DH Shin, KS Choi, CH Jang, YT Ju, BK 2024-01-21T08:44:29Z 2024-01-21T08:44:29Z 2021-09-03 2003-05-19 0003-6951 https://pubs.kist.re.kr/handle/201004/138565 A simple fabrication of gate-controlled nanodevices made of the Co nanodots on tungsten (W)-nanowire templates by using conventional photolithography and a thin film technique is reported. The combined multiple grain nanobridge allows the observation of the Coulomb gap up to a temperature as high as 200 K and shows nonlinear current-voltage characteristics up to 250 K. The combination of Co dots with straight W-nanowire templates opens possibilities of reproducible blockade devices. (C) 2003 American Institute of Physics. English AMER INST PHYSICS SINGLE-ELECTRON SYSTEM MEMORY Coulomb blockade devices of Co dot arrays on tungsten-nanowire templates fabricated by using only a thin film technique Article 10.1063/1.1571978 1 APPLIED PHYSICS LETTERS, v.82, no.20, pp.3535 - 3537 APPLIED PHYSICS LETTERS 82 20 3535 3537 scie scopus 000182823300053 2-s2.0-0038319036 Physics, Applied Physics Article SINGLE-ELECTRON SYSTEM MEMORY