Kim, JY Park, JY Seo, JH Whang, CN Kang, HJ Kim, SS Choi, DS Chae, KH 2024-01-21T08:45:16Z 2024-01-21T08:45:16Z 2021-09-03 2003-05-10 0039-6028 https://pubs.kist.re.kr/handle/201004/138579 The atomic structure of Cs atoms adsorbed on the Si(0 0 1)(2 x 1) surface has been investigated by coaxial impact collision ion scattering spectroscopy. When 0.5 ML of Cs atoms are adsorbed on Si(0 0 1). at room temperature, it is found that Cs atoms occupy a single absorption site on T3 with a height of 3.18 +/- 0.05 Angstrom from the second layer of Si(0 0 1)(2 x 1) surface, and the bond length between Cs and the nearest Si atoms is 3.71 +/- 0.05 Angstrom. (C) 2003 Elsevier Science B.V. All rights reserved. English ELSEVIER SCIENCE BV ENERGY ELECTRON-DIFFRACTION PHOTOELECTRON DIFFRACTION ION-SCATTERING COVERAGE SPECTROSCOPY ADSORPTION CESIUM 2X1 Atomic structure of Cs layer grown on Si(001)(2 x 1) surface at room temperature Article 10.1016/S0039-6028(03)00378-9 1 SURFACE SCIENCE, v.531, no.1, pp.L340 - L346 SURFACE SCIENCE 531 1 L340 L346 scie scopus 000182744400003 2-s2.0-0037431531 Chemistry, Physical Physics, Condensed Matter Chemistry Physics Article ENERGY ELECTRON-DIFFRACTION PHOTOELECTRON DIFFRACTION ION-SCATTERING COVERAGE SPECTROSCOPY ADSORPTION CESIUM 2X1 surface structure, morphology, roughness, and topography silicon alkali metals low energy ion scattering (LEIS)