Park, JH Hong, KS Cho, WJ Chung, JH 2024-01-21T09:00:53Z 2024-01-21T09:00:53Z 2022-01-25 2003-05 0021-4922 https://pubs.kist.re.kr/handle/201004/138585 ZrO2:Er thin films for active waveguide applications were fabricated by the metal-organic chemical vapor deposition (MOCVD) method. X-ray diffraction demonstrated that there is a rapid change of preferred orientation, from (001) to (100), in samples of which the Er contents are 2.39 mol% and 10.41 mol%, respectively. The observed phase change from monoclinic to tetragonal was attributed to the c/a ratio reduction with Er ion incorporation into the ZrO2 matrix. A considerable increase in oxygen deficiency leads to the phase change, as revealed by X-ray photoelectron spectroscopy (XPS). The near-infrared photoluminescence of I-4(13/2) --> I-4(15/2) transition was investigated and the quenching concentration for the luminescence was found to be 2.39 mol%. It was proposed that the oxygen deficiency observed at 10.41 mol% Er concentration is mainly responsible for the quenching phenomenon. English INST PURE APPLIED PHYSICS Study on ZrO2 : Er thin films fabricated by metal-organic chemical vapor deposition Article 10.1143/JJAP.42.2839 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.42, no.5A, pp.2839 - 2842 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 42 5A 2839 2842 N scie scopus 000183744900060 2-s2.0-0038042514 Physics, Applied Physics Article SOL-GEL PROCESS WAVE-GUIDES MU-M SILICON LUMINESCENCE FLUORESCENCE SUBSTRATE MOCVD MGO Er-doped ZrO2 MOCVD tetragonal monoclinic oxygen deficiency waveguide photoluminescence