Lee, CY Song, JD Lee, YT Kim, TW 2024-01-21T09:02:00Z 2024-01-21T09:02:00Z 2022-01-10 2003-05 0038-1098 https://pubs.kist.re.kr/handle/201004/138605 Photoluminescence (PL) measurements have been carried out to investigate the annealing effects in one-period and three-periods of InAs/GaAs self-assembled quantum dots (QDs) grown on GaAs substrates by using molecular beam epitaxy. After annealing, the PL spectra for the annealed InAs/GaAs QDs showed dramatic blue shifts and significant linewidth narrowing of the PL peaks compared with the as-grown samples. The variations in the PL peak position and the full width at half-maximum of the PL peak are attributed to changes in the composition of the InAs QDs resulting from the interdiffusion between the InAs QDs and the GaAs barrier and to the size homogeneity of the QDs. These results indicate that the optical properties and the crystal qualities of InAs/GaAs QDs are dramatically changed by thermal treatment. (C) 2003 Elsevier Science Ltd. All rights reserved. English PERGAMON-ELSEVIER SCIENCE LTD GAAS LASER OPERATION ISLANDS GROWTH Effects of thermal annealing on the interband transitions of single and vertically stacked InAs/GaAs self-assembled quantum dots Article 10.1016/S0038-1098(02)00811-6 1 SOLID STATE COMMUNICATIONS, v.126, no.7, pp.421 - 424 SOLID STATE COMMUNICATIONS 126 7 421 424 scie scopus 000182779100012 Physics, Condensed Matter Physics Article GAAS LASER OPERATION ISLANDS GROWTH nanostructures crystal growth optical properties