Jeon, GY Kim, JS Whang, CN Im, S Song, JH Song, JH Choi, WK Kim, HK 2024-01-21T09:02:49Z 2024-01-21T09:02:49Z 2021-09-03 2003-05 0168-583X https://pubs.kist.re.kr/handle/201004/138620 We report on the ultra-shallow p(+)-n junction formation by decaborane (B10H14) ion implantation into n-Si(100) substrates. The implantation energies of 5, 10 and 15 keV were used with the doses of 1 x 10(12) and 1 x 10(13) cm(-2). The implanted samples were then subject to activation-annealing at 800, 900 and 1000 degreesC for 10 s. According to the results of secondary ion mass spectrometry, the p(+) layer thinner than 50 nm formed in most of the samples. Current-voltage (I-V) measurements performed on the p(+)-n junction exhibited that the minimum leakage current density at -5 V was similar to10(-6) A/cm(-2) when the decaborane of 1 x 10(13) cm(-2) was implanted, while the maximum activated carrier dose of p(+) layers was measured up to 8.1 x 10(13) cm(-2) by Hall measurements. (C) 2003 Elsevier Science B.V. All rights reserved. English ELSEVIER SCIENCE BV BORON Formation and characterizations of ultra-shallow p(+)-n junctions using B10H14 ion implantation Article 10.1016/S0168-583X(03)00774-2 1 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, v.206, pp.409 - 412 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 206 409 412 scie scopus 000183690500090 2-s2.0-0038075242 Instruments & Instrumentation Nuclear Science & Technology Physics, Atomic, Molecular & Chemical Physics, Nuclear Instruments & Instrumentation Nuclear Science & Technology Physics Article; Proceedings Paper BORON decaborane implantation shallow junction hall measurement leakage current density