Kim, TY Lee, KR Eun, KY Oh, KH 2024-01-21T09:03:40Z 2024-01-21T09:03:40Z 2021-09-03 2003-04-29 0009-2614 https://pubs.kist.re.kr/handle/201004/138635 It is well known that the growth of carbon nanotubes (CNTs) by chemical vapor deposition using a transition metal catalyst is greatly enhanced in a nitrogen environment. We show here that the enhanced growth is closely related to nitrogen incorporation into the CNT wall and cap during growth. This behavior is consistent with theoretical calculations of CNx thin films, showing that nitrogen incorporation to the graphitic basal plane reduces the elastic strain energy for curving the graphitic layer. Enhanced CNT growth by nitrogen incorporation is thus due to a decrease in the activation energies required for nucleation and growth of the tubular graphitic layer. (C) 2003 Elsevier Science B.V. All rights reserved. English ELSEVIER SCIENCE BV CHEMICAL-VAPOR-DEPOSITION NITRIDE NUCLEATION FILMS GAS Carbon nanotube growth enhanced by nitrogen incorporation Article 10.1016/S0009-2614(03)00465-2 1 CHEMICAL PHYSICS LETTERS, v.372, no.3-4, pp.603 - 607 CHEMICAL PHYSICS LETTERS 372 3-4 603 607 scie scopus 000182568000049 2-s2.0-0037472119 Chemistry, Physical Physics, Atomic, Molecular & Chemical Chemistry Physics Article CHEMICAL-VAPOR-DEPOSITION NITRIDE NUCLEATION FILMS GAS CNT CVD nitrogen effect