Kim, SK Chung, DH Lee, HS Cho, HN Park, JW Hong, JW Kim, TW 2024-01-21T09:04:56Z 2024-01-21T09:04:56Z 2021-09-03 2003-04-04 0379-6779 https://pubs.kist.re.kr/handle/201004/138651 Temperature dependence of current-voltage-luminance characteristics in organic light-emitting diodes are studied in a device structure of ITO/TPD/Alq(3)/Al to understand an electrical conduction mechanism. The current-voltage-luminance characteristics are measured in the temperature range of 8Ksimilar to300K, and analyzed them using a hopping model with exponential trap distribution and Fowler-Nordheim tunneling. At low temperatures below 150K, the Fowler-Nordheim tunneling conduction mechanism is dominant. And we have obtained a zero field barrier height to be about 0.6similar to0.8eV English ELSEVIER SCIENCE SA DEVICES Temperature dependent electrical properties in ITO/TPD/Alq(3)/Al organic light-emitting diodes Article 10.1016/S0379-6779(02)00895-0 1 SYNTHETIC METALS, v.137, no.1-3, pp.1041 - 1042 SYNTHETIC METALS 137 1-3 1041 1042 scie scopus 000182533900086 2-s2.0-0037419379 Materials Science, Multidisciplinary Physics, Condensed Matter Polymer Science Materials Science Physics Polymer Science Article; Proceedings Paper DEVICES organic light-emitting diodes conduction mechanism hopping model Fowler-Nordheim tunneling