Kim, DG Lee, HH Choi, WK Lee, JJ Choi, YW Lee, S Woo, DH Byun, YT Kim, JH Kim, SH Futakuchi, N Nakano, Y 2024-01-21T09:08:04Z 2024-01-21T09:08:04Z 2021-09-03 2003-04 0091-3286 https://pubs.kist.re.kr/handle/201004/138709 InGaAs/lnP multiple quantum well (MQW) PnpN depleted optical thyristors (DOTs) operating at 1.55 mum are proposed and fabricated. To analyze their switching characteristics, we simulate nonlinear s-shape current-voltage curves using the finite difference method (FDM) associated with the current-oriented method. Using the FDM, we calculate the effects of such parameters as doping concentration and the thicknesses of the outer and inner layers of the thyristor to determine an optimized structure in the view of fast and low-power-consuming operation. With these results, we fabricate waveguide- and vertical-type InGaAs/InP MQW PnpN DOTs. The waveguide-type DOT shows sufficient nonlinear s-shape I-V characteristics with a switching voltage of 4.03 V and a holding voltage of 1.77 V, and spontaneous emission along the waveguide. The current-voltage characteristics of the vertical-type DOT are shown very well under 150 muW of input power, while the s-shape disappears at 200 muW. (C) 2003 Society of Photo-Optical Instrumentation Engineers. English SPIE-INT SOCIETY OPTICAL ENGINEERING OPTOELECTRONIC SWITCH HETEROSTRUCTURE DEVICES Optical characteristics of PnpN optical thyristor operating at 1.55 mu m Article 10.1117/1.1557160 1 OPTICAL ENGINEERING, v.42, no.4, pp.1093 - 1099 OPTICAL ENGINEERING 42 4 1093 1099 scie scopus 000182194200030 2-s2.0-0037665174 Optics Optics Article OPTOELECTRONIC SWITCH HETEROSTRUCTURE DEVICES depleted optical thyristor finite difference method waveguide optical switching spontaneous emission optical communication systems