Yu, JS Song, JD Kim, JM Bae, SJ Lee, YT Lim, H 2024-01-21T09:09:11Z 2024-01-21T09:09:11Z 2021-09-01 2003-04 0947-8396 https://pubs.kist.re.kr/handle/201004/138730 We investigated the effect of rapid thermal annealing, (RTA) on the photoluminescence (PL) and electroluminescence of the In0.53Ga0.47As/In-0.53 (Ga0.6Al0.4)(0.47)As multiple quantum well (MQW) laser structure with InGaAlAs barrier layers provided by the digital-alloy technique. The SiO2- (Si3N4-) capped samples followed by the RTA exhibited a significant improvement of PL intensity without any appreciable shifts in PL peak energy for settings of up to 750 degreesC (800 degreesC) for 45 s. This improvement is attributed to the annealing of nonradiative defects in InAlAs layers of digital-alloy InGaAlAs and partially those near the heterointerfaces of the digital-alloy layers. The InGaAs/InGaAlAs MQW laser diodes fabricated on the samples annealed at 850 degreesC show a hugely improved lasing performance. English SPRINGER-VERLAG MOLECULAR-BEAM EPITAXY DIELECTRIC CAPPING LAYERS OPTICAL-PROPERTIES STOICHIOMETRY DEPENDENCE DIODES Improvement of photoluminescence and electroluminescence characteristics of MBE-grown In0.53Ga0.47As/In-0.53(Ga0.6Al0.4)(0.47)As quantum well laser structure with InGaAlAs digital alloys by thermal annealing Article 10.1007/s00339-002-1978-3 1 APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.76, no.6, pp.979 - 982 APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 76 6 979 982 scie scopus 000182493700026 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article MOLECULAR-BEAM EPITAXY DIELECTRIC CAPPING LAYERS OPTICAL-PROPERTIES STOICHIOMETRY DEPENDENCE DIODES InGaAs/GaAs thermal annealing