Lee, JH Choi, WJ Park, YJ Han, IK Lee, JI Cho, WJ E. K. Kim C. M. Lee H.-W. Kim 2024-01-21T09:14:38Z 2024-01-21T09:14:38Z 2022-01-11 2003-02 0374-4884 https://pubs.kist.re.kr/handle/201004/138829 Intermixing effects of MOCVD (metal organic chemical vapor deposition) grown InGaAs SAQDs (self-assembled quantum dots) covered With SiO2 and SiNx -SiO2 dielectric capping layers were investigated. The intermixing of SAQDs was isothermally performed at 700 degreesC by varying annealing time tinder the N-2-gas ambient. It was confirmed from the PL measurement after the thermal annealing that, the emission energy of SAQDs was blue-shifted by 190 meV, the FWHM (full width at half maximum) was narrowed from 76 meV to 47 meV an the PL intensity was increased. SiNx-SiO2 double capping layer have been found to induce larger PL intensity after the thermal annealing of SAQDs compared to SiO2 single capping layer. English KOREAN PHYSICAL SOC Thermal treatment of InGaAs/GaAs self-assembled quantum dots with SiNx and SiO2 capping layers Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.42, pp.S313 - S315 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 42 S313 S315 N scie scopus kci 000181337500049 2-s2.0-0037305450 Physics, Multidisciplinary Physics Article; Proceedings Paper GAAS LUMINESCENCE ISLANDS self-assembled quantum dot directric capping thermal annealing