Kim, J Park, YJ Byun, D Kim, EK Koh, EK Park, IW 2024-01-21T09:31:17Z 2024-01-21T09:31:17Z 2022-01-10 2003-02 0374-4884 https://pubs.kist.re.kr/handle/201004/138867 The effects of plasma pretreatment on sapphire and the properties of the GaN overgrown epilayers were investigated. The sapphire surface was pretreated with H-2/N-2 mixed-plasma at 350degreesC for 30 min with fixed 50 W plasma power from which an about 2 mm thick oxygeti-deficient layer was obtained. GaN epilaver of about 4.5 mum thick were grown using a metal organic chemical vapor deposition (MOCVD) system, X-ray rocking curves and cathodoluminescence spectra of the GaN epilavers showed that the crystallinity was improved through the mixed gas-plasma pretreatment of sapphire substrate. It was found that the oxygen-deficient thin layer plays a major role in reducing crytallographic defects in the GaN epilayers. English KOREAN PHYSICAL SOC SUBSTRATE SURFACE NITRIDATION GROWTH TEMPERATURE The effects of H-2/N-2 mixed gas-plasma pretreatment of sapphire(0001) surface on the characteristics of GaN epilayers Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.42, pp.S446 - S449 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 42 S446 S449 scie scopus kci 000181337500083 2-s2.0-0037307697 Physics, Multidisciplinary Physics Article; Proceedings Paper SUBSTRATE SURFACE NITRIDATION GROWTH TEMPERATURE GaN H-2/N-2 mixed gas plasma oxygen-deficient thin layer