Kim, HJ Han, I Choi, WJ Park, YJ Cho, WJ Lee, JI Kim, DM Zimmermann, J 2024-01-21T09:31:59Z 2024-01-21T09:31:59Z 2021-09-01 2003-02 0374-4884 https://pubs.kist.re.kr/handle/201004/138879 In this article we propose a comprehensive physical model for the photo-response of MODFET's and analyze the experimental results for p-channel InGaP/GaAs/InGaAs double heterojunction pseudomorphic MODFET's. The analytic model is based on the quantum nature of the two-dimensional carrier statistics in the channel and the recently developed device equation for tit(gate current. The model predicts a power law relationship between the current ratio with and without optical illumination, and the optical intensity, and successfully explains the experimental results. The gate voltage dependence of the effective ideality factor for the whole gate structure was extracted and discussed. English KOREAN PHYSICAL SOC FIELD-EFFECT TRANSISTOR LOW-FREQUENCY NOISE WAVE-FUNCTION GATE LEAKAGE QUANTUM-WELL CAD MODEL HEMT ILLUMINATION CONDUCTION Analytic model for photo-response of p-channel MODFET'S Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.42, pp.S642 - S646 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 42 S642 S646 scie scopus kci ART000990453 000181337500123 2-s2.0-0037307709 Physics, Multidisciplinary Physics Article; Proceedings Paper FIELD-EFFECT TRANSISTOR LOW-FREQUENCY NOISE WAVE-FUNCTION GATE LEAKAGE QUANTUM-WELL CAD MODEL HEMT ILLUMINATION CONDUCTION MODFET&apos s photo-response gate current ideality factor thresbold voltage drain current two-dimensional electron (hole) gas