Han, I Choi, WJ Kim, HJ Park, YJ Cho, WJ Lee, JI Chovet, A Brini, J 2024-01-21T09:32:09Z 2024-01-21T09:32:09Z 2021-09-01 2003-02 0374-4884 https://pubs.kist.re.kr/handle/201004/138882 We present a simple and novel model for low-frequency excess noise in polycrystalline silicon thin-film transistors. In the model, the grain boundary is considered as a symmetric Schottky barrier and the noise generation mechanisms for both mobility fluctuation and number fluctuation in a Schottky barrier are taken into account. Analysis of the experimental results shows that carrier number fluctuation by barrier height modulation involving thermal activation at bulk trap states in the depletion layer of the grain boundary is found to be responsible for 1/f noise at lower currents. Mobility fluctuation prevails at higher current, due to the increased Hooge parameter and the lack of noise sources for carrier number fluctuation. English KOREAN PHYSICAL SOC LOW-FREQUENCY NOISE SCHOTTKY DIODES GRAIN FIELD LASER SPECTROSCOPY FLUCTUATION CONDUCTION RESISTORS PRESSURE Simple model for 1/f noise in polycrystalline silicon thin-film transistors Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.42, pp.S652 - S656 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 42 S652 S656 scie scopus kci ART001197693 000181337500125 2-s2.0-0037305507 Physics, Multidisciplinary Physics Article; Proceedings Paper LOW-FREQUENCY NOISE SCHOTTKY DIODES GRAIN FIELD LASER SPECTROSCOPY FLUCTUATION CONDUCTION RESISTORS PRESSURE polycrystalline silicon thin-film transistors 1/f noise thermal activation mobility fluctuation