Lee, JW Kim, H Ju, BK Lee, YH Jang, J 2024-01-21T09:32:48Z 2024-01-21T09:32:48Z 2021-09-01 2003-02 0374-4884 https://pubs.kist.re.kr/handle/201004/138894 Field-induced electron emission properties of porous poly-silicon nano-structured (PNS) diodes were investigated as a function of anodizing conditions, including morphological analysis, various kinds of top electrode thickness and the measuring substrate temperature. Also, the vacuum packaging process was performed by the normal glass frit method. The PNS layer was formed on heavily-doped n-type < 100 > Si substrate. Non-doped poly-silicon layer was grown by low-pressure chemical vapor deposition (LPCV&apos;D) to a thickness of 2mm. Subsequently, the poly-silicon layer was anodized in a mixed solution HF (50 wt%): ethanol (99.8 wt%) = 1:1 as a function of anodizing condition. After anodizing, the PNS layer was thermally oxidized for 1 hr at 900 degreesC. Subsequently, the top electrode was deposited as a function of Au thickness using E-beam evaporator and, in order to establish ohmic contact, thermally evaporated Al was deposited on the back side of a Si substrate. The prepared PNS diode was packaged using the normal vacuum sealing method. After the vacuum sealing process, the PNS diode was mounted on the PC measurement table. When a positive bias was applied to the top electrode. the electron emission was observed, which was caused by field-induced electron emission through the top metal. English KOREAN PHYSICAL SOC Observation of field-induced electron emission in porous polycrystalline silicon nano-structured diode Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.42, pp.S179 - S183 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 42 S179 S183 scie scopus kci 000181337500018 2-s2.0-0037307098 Physics, Multidisciplinary Physics Article; Proceedings Paper porous poly-silicon nano-structured diode electrochemical anodizing technique electron emission property