Kim, JY Park, JY Seo, JH Whang, CN Kim, SS Choi, DS Kang, HJ Chae, KH 2024-01-21T09:32:51Z 2024-01-21T09:32:51Z 2021-09-01 2003-02 1567-1739 https://pubs.kist.re.kr/handle/201004/138895 The atomic structure and the saturation coverage of Cs on the Si(0 0 1)(2 x 1) surface at room temperature have been studied by coaxial impact collision ion scattering spectroscopy (CAICISS). For the atomic structure of saturated Cs/Si(0 0 1)(2 x 1) surface, it is found that Cs atoms occupy a single adsorption site at T3 on the Si(0 0 1) surface. The height of Cs atoms adsorbed at T3 site is 3.18 +/- 0.05 Angstrom from the second layer of Si(0 0 1)(2 x 1) surface. The saturation coverage estimated from the measured CAICISS intensity ratio and the proposed atomic structure is found to be 0.46 +/- 0.06 ML. (C) 2002 Elsevier Science B.V. All rights reserved. English ELSEVIER SCIENCE BV ENERGY ELECTRON-DIFFRACTION PHOTOELECTRON DIFFRACTION COVERAGE ADSORPTION CESIUM 2X1 Atomic structure of Cs grown on Si(001)(2x1) surface by coaxial impact collision ion scattering spectroscopy Article 10.1016/S1567-1739(02)00241-9 1 CURRENT APPLIED PHYSICS, v.3, no.1, pp.83 - 88 CURRENT APPLIED PHYSICS 3 1 83 88 scie scopus kci other ART001212740 000181656100017 2-s2.0-0037319416 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article; Proceedings Paper ENERGY ELECTRON-DIFFRACTION PHOTOELECTRON DIFFRACTION COVERAGE ADSORPTION CESIUM 2X1 surface structure silicon cesium low energy ion scattering