Lee, H Kang, TD Park, YJ Oh, HT Cho, HY Moriya, R Munekata, H 2024-01-21T09:32:54Z 2024-01-21T09:32:54Z 2021-09-01 2003-02 0374-4884 https://pubs.kist.re.kr/handle/201004/138896 We report pseudodielectric function data < epsilon > = < epsilon(1) > + i < epsilon(2) > of Ga1-x FexAs semiconductors grown on GaAs substrates. The data were obtained front 1.5 to 6 eV using spectroscopic ellipsometry. Critical point (CP) parameters were obtained by fitting model lineshapes to numerically calculated second energy derivatives of < epsilon >. The bandgap energies of E-1, E-1 + Delta(I), E-0&apos;, and E-2 were determined. We observed an increase of the E-1 and E-1 + Delta(1) gap energy similar to that of ZnFexSe1-x. The linewidth of CPs increased with increasing Fe compositions. The band gap energy shifts were mainly attributed to the alloying effect because the strain effect on the band gap energies was negligible. We also discuss the band gap shift in terms of an sp-d hybridization model. English KOREAN PHYSICAL SOC TRANSITION FE Spectroscopic ellipsometric properties of Ga1-xFexAs dilute magnetic semiconductors Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.42, pp.S441 - S445 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 42 S441 S445 scie scopus kci 000181337500082 2-s2.0-0037307050 Physics, Multidisciplinary Physics Article; Proceedings Paper TRANSITION FE dilute magnetic semiconductor ellipsometry dielectric function critical point band structure