Yu, JS Song, JD Lee, YT Lim, H 2024-01-21T09:33:03Z 2024-01-21T09:33:03Z 2021-09-01 2003-02 0374-4884 https://pubs.kist.re.kr/handle/201004/138898 We investigated the effects of the thickness of SiO2 and Si3N4 capping layer and the distance of quantum wells from the sample surface on the intermixing of In0.2Ga0.8As/GaAs multiple quantum well (MQW) structures by impurity-free vacancy disordering. It was found that the thin SiO2 capping layer of 25 nm suppressed the QW intermixing (QWI) due to the saturation of out-diffused Ga atoms and the reduction of porosity induced into the capping layer. The QWI remained constant for the samples capped with SiO2 thickness above 50 nm. The degradation of Si3N4 films was observed after rapid thermal annealing for the MWQ samples capped with thick Si3N4 of above 300 nm. From the investigation of QW structural parameters on the QWI, the magnitude of blueshift increases with decreasing distance of QWs from the sample surface. English KOREAN PHYSICAL SOC CAP LAYER DEPENDENCE INTERDIFFUSION STOICHIOMETRY GROWTH LASERS Effects of the thickness of dielectric capping layer and the distance of quantum wells from the sample surface on the intermixing of In0.2Ga0.8As/GaAs multiple quantum well structures by impurity-free vacancy disordering Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.42, pp.S458 - S461 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 42 S458 S461 scie scopus kci 000181337500086 Physics, Multidisciplinary Physics Article; Proceedings Paper CAP LAYER DEPENDENCE INTERDIFFUSION STOICHIOMETRY GROWTH LASERS quantum well photoluminescence